InGaP∕InGaAs PHEMT with high IP3 for low noise applications
نویسندگان
چکیده
منابع مشابه
Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier
The silicon nitride passivated copper-metallized airbridges had been successfully integrated on the low noise PHEMT (Pseudomorphic High Electron Mobility Transistor) using WNx as the diffusion barrier between copper and the conventional gold based electrodes. 400 Å PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon nitride was used for copper airbridge passivation to avoid the copper oxi...
متن کاملA Low Power, High Gain, Low Noise Amplifier with Improved Noise Figure and Input Matching for Ultra Wide Band Applications
Abstract– In this paper, two low noise amplifiers (LNAs), one without feedback and another one with active shunt partial feedback, are proposed for ultra wide band (UWB) applications. Both the proposed LNAs are designed using 90 nm CMOS technology and their performance parameters are analyzed by using post layout simulation. The proposed LNA without feedback achieves a power gain (S21) of 16.4 ...
متن کاملA low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology
A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36...
متن کاملHigh and Low Speed Output Buffer Design with Reduced Switching Noise for USB Applications
-A novel high and low speed output buffer circuit is proposed for Universal Serial Bus (USB) interface applications. Operation principles of this novel buffer are developed based on slew rate control and delayed turn-on technique. The mechanism for slew rate control is process variation self compensating. So, both precise rise and fall times of the output signal have been obtained for low speed...
متن کاملCoplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics Letters
سال: 2004
ISSN: 0013-5194
DOI: 10.1049/el:20040458